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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2242
DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 300V(Min) *High Current-Gain--Bandwidth Product: fT= 20MHz(Min)@IC= 20mA APPLICATIONS *Power amplifier applications *Color TV sound output applications *Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w w
scs .i w
300 V 300 V 5 V 150 mA 50 mA 1.5 W 25
.cn mi e
IB
B
Base Current-Continuous Collector Power Dissipation @ Ta=25
PC Collector Power Dissipation @ TC=25 TJ Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2242
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
B
300
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 100mA; IB= 10mA
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 50mA ; VCE= 10V
0.9
V
ICBO
Collector Cutoff Current
VCB= 240V; IE=0
1.0
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0
A
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
w w
scs .i w
IE= 0 ; VCB= 50V; ftest=1MHz
IC= 20mA ; VCE= 50V
.cn mi e
40 20
170
5.5
12
pF
50
MHz
isc Websitewww.iscsemi.cn
2


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